Mathematical modeling of stationary temperature fields for construction of microelectronic devices
International Journal of Development Research
Mathematical modeling of stationary temperature fields for construction of microelectronic devices
Received 18th August, 2019; Received in revised form 11th September, 2019; Accepted 19th October, 2019; Published online 20th November, 2019
Copyright © 2019, Yordan L. Milev and Marin H. Hristov. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
The problem of analyzing stationary temperature fields in the form of a parallelepiped is under consideration. Heat sources are located on the top of the parallelepiped. The path to the solution of the problem starts from the basic equa-tion of thermal conductivity which is mathematically described with the Laplace equation system.
